The IRFD9024PBF is a P-channel power MOSFET introduced by Vishay, belonging to the third-generation HEXFET® series. It features a unique 4-pin DIP (HVMDIP) through-hole package. This device boasts fast switching, low on-resistance, and robust durability. Its package is specifically designed for automated insertion and stacking, allowing for the stacking of multiple combinations on standard 0.1-inch pin centers. The dual drains can serve as a heat dissipation link.
Main parameters: Source-drain voltage -60V, continuous drain current -1.6A (some channels marked as 1.1A), maximum on-resistance 0.28Ω. Gate charge 19nC, input capacitance 570pF, power dissipation 1.3W. Operating temperature range -55°C to +175°C.
Features ：
• Transistor polarity: P-channel enhancement type MOSFET, HEXFET® series
• Source leakage voltage (Vdss): -60V
• Continuous drain current (Id): -1.6A
• Conduction resistance (Rds(on)): Maximum 0.28Ω at Vgs = -10V
• Power dissipation (Pd): 1.3W
• Gate charge (Qg): Typical value 19 nC @ Vgs = 10 V
• Input capacitor (Ciss): Typical value 570pF at Vds = 25V
• Gate-source voltage (Vgs): ±20V
• Threshold voltage (Vgs(th)): Maximum -4V at Id = -250µA
• Switching speed: Fast switching. Typical on-state delay: 13 ns, off-state delay: 15 ns.
• Package type: HVMDIP-4 (4-DIP), through-hole installation
• Environmental compliance: Meets RoHS3 standards, lead-free
Application：
• Power management: Load switch, power reverse connection protection circuit
• DC-DC Conversion: Power Switches in Buck/Boost Converters
• Motor drive: Driving of inductive loads such as small motors and fans
• Industrial control: Power interfaces for PLCs and automated equipment
• General-purpose switch: Various applications of medium and low voltage power switches
