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Model:AFT05MS006NT1

Model:ACT4533AYH-T
Manufacturer:NXP Semiconductors 
Stocks:20000
Describe:

136-941 MHz, 6W, 7.5V LDMOS broadband RF power transistor, using enhanced N-channel LDMOS process. This device is specifically designed for handheld two-way walkie-talkie applications, featuring high gain, high durability and broadband performance, suitable for large signal, common-source amplifier applications. The input and output are not matched, allowing for flexible use over a wider frequency range, covering VHF, UHF and 700-800 MHz bands.
 
Features :

• Frequency range: 136 - 941 MHz, covering VHF, UHF and 700 - 800 MHz communication bands 
• Output power: 6W (typical value), up to 6.7W under wideband conditions 
• Power gain: 15.2 ~ 18.3 dB (depending on frequency) 
• Drain efficiency: 58.5% - 73.0%, high-efficiency design 
• Operating voltage: Drain voltage 7.5V (typical value), rated voltage 30V 
• Static current: 100mA (typical value of IDQ) 
• Input capacitor: 75pF, Output capacitor: 47pF, Reverse transmission capacitor: 1.7pF 
• Extremely high durability: Capable of withstanding >65:1 VSWR (voltage standing wave ratio) at all phase angles, 520 MHz, 10.8V, 3dB overdrive, without any component degradation. 
• Integrated ESD protection: Enhances device reliability 
• Integrated stability enhancement feature: Simplifies circuit design 
• High linearity: Suitable for TETRA, SSB and other linear modulation applications 
• Excellent thermal performance: Working temperature range -40°C to +150°C 
• Packaging form: PLD - 1.5W surface mount packaging 
• MSL level: 3 (168 hours) 
• Environmental compliance: Compliant with RoHS regulations
 
Application:

• Output stage of handheld VHF band radio (136 - 174 MHz) 
• Output stage of UHF band handheld radio (440 - 520 MHz) 
• Output stage of 700-800 MHz handheld walkie-talkie 
• Application of Large-Signal, Common-Source Amplifiers