IRLML6402TRPBF-OPTECH CO.,LIMITED

Model:IRLML6402TRPBF

Model:IRLML6402TRPBF
Manufacturer：NXP
Stocks：8000
Describe：

IRLML6402TRPBF is a P-channel, logic-level, enhanced power MOSFET, featuring an SOT-23 (Micro3™) ultra-small surface-mount package. This device utilizes advanced processing technology to achieve extremely low on-resistance on a very small silicon area, and is specifically designed for efficient power management and load switch applications in battery-powered equipment.

Features ：

• Transistor type: P-channel Enhancement MOSFET

• Drain-source voltage (VDS): -20V

• Continuous drain current (ID): -3.7A (Ta = 25°C)

• On-state resistance (RDS(on)): 65mΩ (maximum value @ VGS = -4.5V, ID = -3.7A)

• Gate threshold voltage (VGS(th)): Maximum -1.2V @ -250µA

• Gate charge (Qg): Typical value 8nC @ VGS = -5V

• Input capacitance (Ciss): Typical value 633pF @ VDS = -10V

• Power consumption (Pd): 1.3W (Ta = 25°C)

• Operating temperature range: Junction temperature -55°C ~ +150°C

• Package type: SOT-23 (Micro3™), 3-pin, surface mount

• MSL level: Level-1 (unrestricted)

• Environmental compliance: Compliant with RoHS3 standards, lead-free, halogen-free

Application：

• Battery-powered equipment and load management: Battery protection, load switch and power distribution

• DC-DC converters: Low-voltage power conversion and voltage regulation

• Portable electronic devices: Ultra-thin devices, PCMCIA cards and other space-constrained applications

• General switching circuits: Signal level conversion, electronic load control