• Transistor type: N-channel, enhancement mode
• Drain-source voltage (Vdss): 30V
• Continuous drain current (Id): 5.7A (Ta = 25°C) / 7.2A (partially enhanced channel marked)
• On-state resistance (RDS(on)): 23mΩ (maximum @ 4.5V) / 19mΩ (typical @ 4.5V)
• Gate threshold voltage (Vgs(th)): Maximum 900mV @ 250µA, 0.65V typical value
• Gate charge (Qg): 18.6nC @ 4.5V
• Input capacitance (Ciss): 1150pF @ 15V
• Power dissipation (Pd): 510mW (Ta) / 6.94W (Tc) / 1200mW (partly marked)
• Operating temperature range: -55°C ~ +150°C (TJ)
• Package type: SOT-23 (TO-236AB), 3-pin, surface mount
• MSL level: Level-1 (unrestricted)
• Environmental compliance: Compliant with RoHS3 standard