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Model:PMV20XNER

Model:PMV20XNER
Manufacturer:NXP 
Stocks:8000
Describe:

PMV20XNER is a N-channel enhancement power MOSFET launched by Nexperia. It adopts the SOT-23 (TO-236AB) ultra-small surface-mount packaging. This device is based on Trench MOSFET technology and achieves excellent power handling capability within a miniature package. It is specifically designed for relay driving, high-speed line driving, low-side load switch, and various switching circuits.
Features :

• Transistor type: N-channel, enhancement mode
 
• Drain-source voltage (Vdss): 30V
 
• Continuous drain current (Id): 5.7A (Ta = 25°C) / 7.2A (partially enhanced channel marked)
 
• On-state resistance (RDS(on)): 23mΩ (maximum @ 4.5V) / 19mΩ (typical @ 4.5V)
 
• Gate threshold voltage (Vgs(th)): Maximum 900mV @ 250µA, 0.65V typical value
 
• Gate charge (Qg): 18.6nC @ 4.5V
 
• Input capacitance (Ciss): 1150pF @ 15V
 
• Power dissipation (Pd): 510mW (Ta) / 6.94W (Tc) / 1200mW (partly marked)
 
• Operating temperature range: -55°C ~ +150°C (TJ)
 
• Package type: SOT-23 (TO-236AB), 3-pin, surface mount
 
• MSL level: Level-1 (unrestricted)
 
• Environmental compliance: Compliant with RoHS3 standard
Application:

• Relay driver
 
• High-speed line driver
 
• Low-side load switch
 
• Switching circuit
 
• Synchronous rectification or power switch of compact DC-DC converter
 
• Driver control for small motors and LED string lights
 
• Load switch, power path management