H9HCNNN8KUMLHR-NME is an 8Gbit (1GB) LPDDR4 SDRAM low-power memory chip launched by SK Hynix. It adopts a 200-FBGA (10x15mm) package. This chip is specifically designed for mobile devices and embedded systems, featuring high bandwidth and low power consumption as its prominent characteristics.
Its core parameters are: capacity 8Gb, architecture 512M x 16. The maximum data transfer rate is 3733 Mbps, with operating voltages of 1.1V (core) and 1.8V (I/O).
This chip supports multiple low-power modes and advanced functions, such as automatic pre-charging, ZQ calibration, asynchronous reset, and write equalization, and can achieve dual-channel and dual-chip select (2CS) configuration. The operating temperature range covers -25°C to +85°C.
Features ：
• Storage capacity: 8Gbit (1GB), organized as 512M x 16
• Interface standard: LPDDR4 SDRAM
• Data rate: Maximum 3733 Mbps
• Clock frequency: Maximum 3.733 GHz
• Operating voltage: Core 1.06V ~ 1.17V (1.1V nominal), I/O 1.7V ~ 1.95V (1.8V nominal)
• Low power consumption: Typical operating current 23mA, self-refresh current 370µA
• Advanced features: Supports automatic pre-charge, ZQ calibration, asynchronous reset, write balance, automatic self-refresh, etc.
• Package type: BGA-200 (10mm × 15mm)
• Operating temperature: -25°C ~ +85°C
• MSL level: Level-3 (168 hours)
• Environmental compliance: Compliant with RoHS standard
Application：
• Mobile devices: Smartphones, tablets
• Embedded systems: Industrial control, edge computing devices
• High-performance computing: AI accelerators, image processing units
• Automotive electronics: Vehicle Infotainment System (IVI)
