2N7002P-215 is a N-channel enhancement type small-signal MOSFET launched by Nexperia. It adopts SOT-23 (TO-236AB) micro surface-mount packaging and is manufactured using advanced Trench MOSFET technology. This device features logic level compatibility and fast switching speed, and is suitable for general switching applications such as relay driving, high-speed line drivers, and load switches.
Its main parameters are as follows: Source-drain voltage 60V, Continuous drain current 360mA. On-state resistance 1.6Ω (maximum value, @ Vgs=10V, Id=500mA). Gate charge typical value 0.6nC, Input capacitance typical value 30pF, Power dissipation 350mW - 420mW (varies depending on the channel).
This device has achieved AEC-Q101 automotive-grade certification. The gate-source voltage is ±20V, and the operating temperature range is from -55°C to +150°C. It is packaged in SOT-23, with 3 pins and surface mount.
Features ：
• Transistor type: N-channel enhancement MOSFET, Trench MOSFET technology
• Source leakage voltage (Vdss): 60V
• Continuous drain current (Id): 360mA
• On-state resistance (RDS(on)): Maximum 1.6Ω at Vgs = 10V
• Gate charge (Qg): Typical value 0.6 nC
• Input capacitor (Ciss): Typical value 30pF
• Power dissipation (Pd): 350mW ~ 420mW
• Gate-source voltage (Vgs): ±20V
• Functional features: Logic level compatibility, fast switching speed, AEC-Q101 automotive qualification certification
• Operating temperature range: Junction temperature -55°C to +150°C
• Compact package: SOT-23 (TO-236AB), 3 pins, size approximately 3.0mm × 1.4mm × 1.0mm, surface mount
• MSL Level: Level-1 (Unrestricted)
• Environmental compliance: Compliant with RoHS standards
Application：
• Relay drive
• High-speed line driver
• Low-side load switch
• General-purpose switching circuit
• Logic level conversion: Directly driven by TTL/CMOS logic
• Battery-powered system
• Automotive Electronics: AEC-Q101 Certification Support
