STGP20V60DF is a 600V, 20A V-series ultra-high-speed trench-gate insulated gate bipolar transistor (IGBT) launched by STMicroelectronics. It adopts a TO-220-3 through-hole package. This device is specifically optimized for high-frequency switching applications ranging from 50kHz to 100kHz. It achieves an excellent balance between on-state and off-state losses, significantly enhancing the efficiency of very high-frequency converters.
Its key parameters are: collector-emitter breakdown voltage 600V, maximum collector current 40A (pulsed current 80A), maximum power dissipation 167W. Typical saturation voltage is 1.8V @ 20A, maximum saturation voltage 2.2V @ 20A, 15V. Gate charge 116nC, switching losses: on-state 200µJ, off-state 130µJ (test conditions: 400V, 20A, 15V), reverse recovery time 40ns. Maximum junction temperature 175°C.
Features ：
• IGBT Type: Trench Gate Field-Stop Type (V Series Ultra-High Speed)
• Collector-Emitter Voltage (Vces): 600V
• Collector Current (Ic): 40A (Continuous), 80A (Pulse)
• Saturation Voltage (VCE(sat)): Typical value 1.8V, Maximum value 2.2V @ 20A, 15V
• Switching Speed: Ultra-High Speed Switching, No Trailing Off Turn-Off, Switching Frequency Range 50kHz ~ 100kHz
• Gate Charge (Qg): 116nC
• Switching Energy: On 200µJ, Off 130µJ
• Reverse Recovery Diode (Trr): Integrated Ultra-Fast Soft Recovery Diode, 40ns
• Operating Temperature: -55°C ~ +175°C (Maximum Junction Temperature)
• Package Type: TO-220-3, Through-Hole Mounting
• MSL Level: Level-1 (Unlimited, Unlimited Lifespan in Workshop)
• Environmental Compliance: Compliant with RoHS3 Standard, ECOPACK2 Lead-Free Packaging
Application：
• Photovoltaic Inverters (Solar Inverters)
• Uninterruptible Power Supply (UPS)
• Welding Machine
• Power Factor Correction (PFC)
• Very High Frequency Converters
