AONS36314 is a 30V N-channel power MOSFET launched by AOS, featuring a DFN 5x6-8L surface mount package. This device is manufactured based on AOS's advanced Trench Power MOSFET technology, boasting extremely low on-resistance and high current handling capability. It is specifically designed for applications requiring high-efficiency power conversion, such as DC-DC converters and power line regulators (POL) power supplies.
Key performance parameters: Drain-source voltage 30V, continuous drain current 85A (at Tc = 25°C). On-resistance 2.9mΩ (maximum value, Vgs = 10V, Id = 20A). Gate charge 40nC (at Vgs = 10V), input capacitance 1890pF.
Features ：
• Product type: N-channel power MOSFET, TrenchFET technology
• Drain-source voltage (VDS): 30V
• Continuous drain current (ID): 85A (Tc = 25°C); 36.5A (Ta = 25°C)
• On-state resistance (RDS(on)): Maximum 2.9mΩ @ VGS = 10V
• Gate charge (Qg): 40nC @ VGS = 10V
• Power dissipation (Pd): 42W (Tc = 25°C); 6.2W (Ta = 25°C)
• Gate-source voltage (VGS): ±12V
• Operating temperature range: -55°C ~ +150°C (junction temperature)
• Package type: DFN 5x6-8L
• MSL level: Level-1
• Environmental compliance: Compliant with RoHS3 standard, halogen-free
Application：
• DC-DC Converter: Computing, Server and Power Line (POL) Power Supply
• Isolated DC-DC Converter: Telecommunication and Industrial Applications
• Motor Drive
• Power Management
