Model:2SA1552S-TL-E
Model:2SA1552S-TL-E
Manufacturer：onsemi
Stocks：8000
Describe：
2SA1552S-TL-E is a PNP type power bipolar junction transistor (BJT) launched by onsemi, featuring a DPAK (TO-252) surface mount packaging. This device is a complementary pair of the high-performance 2SC4027 NPN transistor, specifically designed for high-voltage switching and power amplification applications.
Utilizing the advanced FBET/MBIT process from ON Semiconductor, it is endowed with high voltage, large current capabilities and ultra-high-speed switching characteristics. Key parameters: Collector-Emitter Voltage - 160V, Collector Current - 1.5A, Power Dissipation - 1W, DC Current Gain (hFE) Typical Value 140 to 280, Characteristic Frequency 120MHz.
Features ：
• Transistor type: PNP, power type, complementary paired device
• Collector-Emitter Voltage (VCEO): -160V
• Collector current (IC): -1.5A (continuous), -2.5A (pulsed)
• Power Dissipation (PD): 1W (Some channels indicate 15W. This is the data for a different packaging version from Sanyo's original factory.)
• DC current gain (hFE): 140 - 280 at 100mA, 5V
• Characteristic frequency (fT): 120 MHz
• Saturation voltage (VCE(sat)) : Maximum -0.5V at 50mA and 500mA
• Package type: DPAK-3 (TO-252-3), surface mount
• MSL level: Level-1 (unrestricted)
• Environmental compliance: Meets RoHS standards, lead-free
Application：
• Switching Power Supply (SMPS): The power switching stage of converters and inverters
• Audio power amplification: The audio output stage of color televisions and audio equipment
• Motor drive: Brushless DC motor (BLDC), inverter drive for stepper motors
• Electronic ballasts and lighting: Switching components in fluorescent lamp and LED driving circuits
