Model:IPT60R022S7
Model:IPT60R022S7
Manufacturer：Infineon Technologies
Stocks：8000
Describe：
IPT60R022S7 is a 600V N‑channel Super‑junction CoolMOS™ S7 power MOSFET launched by Infineon Technologies. It adopts TOLL (PG‑TOLL‑8, HSOF‑8) lead‑less surface‑mount package and is supplied in tape‑and‑reel. This device acts as high‑voltage power switching component with integrated body diode, optimized for low‑frequency power conversion and active rectification to realize circuit switching and power regulation.
Features ：
• Drain‑source voltage Vds: 600 V
• On‑state resistance Rds(on): 22 mΩ (@10V Vgs)
• Continuous drain current Id: 23 A
• Peak pulsed drain current: 375 A
• Kelvin‑source pin for improved large‑current switching performance
• Optimized for low‑frequency switching application, low conduction loss
• Total power dissipation: 390 W
• Gate charge Qg: 150 nC typical
• Package type: TOLL (PG‑TOLL‑8 / HSOF‑8) lead‑less SMD
• Moisture sensitivity level: MSL‑1
• Operating junction temperature: -55℃ ~ +150℃
• RoHS‑compliant, lead‑free, tape‑and‑reel available
Application：
• Active bridge rectifier for power supply
• PFC power factor correction circuit
• Solid‑state relay and solid‑state circuit breaker
• UPS uninterruptible power supply
• Telecom and server switching power supply
• Solar energy power conversion equipment
• Energy‑storage converter system
