MMBFJ110 is an N-channel junction field-effect transistor (JFET) introduced by onsemi, featuring a SOT-23-3 micro surface-mount package. This device is specifically designed for analog or digital switch applications that require extremely low on-resistance.
The main parameters of this device are: gate-source breakdown voltage -25V, zero gate-source voltage drain current (Idss) 10mA @ 15V, gate-source cut-off voltage (VGS(off)) -4V @ 10nA, on-resistance (RDS(on)) 18Ω, maximum power consumption 460mW.
The maximum operating temperature of this device is 150°C (TJ), and the MSL rating is Level-1 (unrestricted).
Features ：
• Product Type: N-channel Junction Field-Effect Transistor (JFET)
• Gate-source breakdown voltage (V(BR)GSS): 25V
• Zero gate-source voltage leakage current (Idss): 10mA @ 15V
• Gate-source cut-off voltage (VGS(off)): 4V @ 10nA
• On-state resistance (RDS(on)): 18Ω
• Maximum power dissipation (Pd): 460mW
• Operating junction temperature (TJ): Maximum 150°C
• Compact package: SOT-23-3 (TO-236-3), surface mount
• MSL grade: Level-1 (unrestricted, 260°C reflow soldering)
• Environmental compliance: Compliant with RoHS3 standard, lead-free (Pb-Free)
